From a single messaging center, communicate with customers across the project. Customers may easily rate and review your business using Signpost. Signpost helps you convert a strong local reputation into internet authority. Mia connects to purchases, emails, and phones to produce automatic customer lists based on insights and behavioral data so that customers may receive personalized communications. Mia, a smart assistant built into the Signpost platform, is provided by the software.
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Users can use the software to record contacts, send automated emails, and execute marketing campaigns on autopilot. It's a cloud-based platform that connects local business owners with their target audiences. In the conclusions the main results on the chloride epitaxy has been summarized and an outlook of this process in the next years has been presented with the actual understanding of the mechanism of the silicon carbide epitaxial growth.SignPost is a CRM and marketing automation service that assists small businesses by offering feedback, recommendations, reviews, and insights from customers. Also the influences of the growth parameters on the surface morphology (step-bunching) and the correlation with defects have been reviewed. We have divided these defects in four categories: 3D defects (epi-stacking faults and inclusions), 2D defects (stacking faults), 1D defects (dislocations), and 0D defects (point defects).
Finally, the influence of different process parameters and in particular of the growth rate on the formation or the reduction of the principal defects that are observed in the epitaxial layer is reviewed. Also, some important results obtained by Monte Carlo simulation on the study of different growth parameters that influence the formation of defects and their evolution are reported.
Then, a large part of the review is devoted to the simulations of the CVD systems, the reaction in the gas phase of the different precursors and the surface reaction models. The improvement of the epitaxy process is strictly related to the improvement of the simulation of the growth that helps the researchers to understand the effect of different parameters on such complex system. Then the introduction of chlorinated precursors in the epitaxial process is reviewed and the effect of this new process on Schottky diodes characteristics is shown. After an introduction on the evolution and history of the epitaxial growth of 4H-SiC, the main physics parameter of this epitaxial growth process is explained in detail using the traditional Burton-Cabrera-Franck theory and the experimental observations of the surface instability due to the off-axis growths. The structure of the review is the following. After this large stride in the process of SiC epitaxial growth, it is time to collect this knowledge in a review that can be a reference point for the future work in this interesting field. The introduction of chloride precursors, the epitaxial growth on large area substrate with low defect density, the improvement of the surface morphology, the understanding of the chemical vapour deposition (CVD) reactions, and epitaxial mechanisms by advanced simulations are just the main results obtained in the homo-epitaxy process of 4H-SiC. In the last ten years, large improvements in the epitaxial silicon carbide processes have been made.
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